参数项参数值
参数项参数值
DC Current Gain hFE Max450 at 50 mA, 2 V
Gain Bandwidth Product fT360 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Collector-Emitter Saturation Voltage130 mV
Emitter- Base Voltage VEBO6 V
MXHTS85412999
DC Collector/Base Gain hfe Min180 at 50 mA, 2 V
KRHTS8541299000
RoHS Details
CNHTS8541290000
DescriptionBipolar Transistors - BJT NPN 50V Vceo 1A Ic MPT3
Package / CaseSC-62-3
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8541290000
JPHTS8541290100
BrandROHM Semiconductor
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Series2SxR
ImageROHM Semiconductor 2SCR513P5T100
Product CategoryBipolar Transistors - BJT
Unit Weight0.021494 oz
SubcategoryTransistors
Factory Pack Quantity1000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SCR513P5
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)