参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min60 S
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
DescriptionMOSFET N-Ch 100V 100A TDSON-8
ImageInfineon Technologies BSC040N10NS5
Rds On - Drain-Source Resistance4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
PackagingReel
PackagingCut Tape
PackagingMouseReel
Package / CasePG-TDSON-8
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time13 ns
Development KitEVAL_1K4W_ZVS_FB_CFD7
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Mounting StyleSMD/SMT
Width5.15 mm
Product TypeMOSFET
ManufacturerInfineon
BrandInfineon Technologies
SeriesOptiMOS 5
RoHS Details
Qg - Gate Charge58 nC
TradenameOptiMOS
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time10 ns
Unit Weight0.003527 oz
Part # AliasesSP001295030 BSC040N10NS5ATMA1
Pd - Power Dissipation139 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time9 ns