参数项参数值
参数项参数值
Forward Transconductance - Min5.3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.8 ns, 5.8 ns
Width1.3 mm
Height0.94 mm
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns, 13.6 ns
MXHTS85412999
Length2.9 mm
KRHTS8541219000
JPHTS8541210101
CAHTS8541210000
Qg - Gate Charge3.6 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageON Semiconductor NTR4503NT1G
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time1.6 ns, 1.8 ns
SeriesNTR4503N
Factory Pack Quantity3000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandON Semiconductor
Unit Weight0.000282 oz
Product TypeMOSFET
DescriptionMOSFET 30V 2.5A N-Channel
ManufacturerON Semiconductor
USHTS8541210095
Pd - Power Dissipation730 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time5.8 ns, 6.7 ns
TypeMOSFET