参数项参数值
参数项参数值
Forward Transconductance - Min1.1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.8 ns
Width1.8 mm
Height1.3 mm
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 P-Channel
MXHTS85412999
Length3.1 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge10.2 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-26-6
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
CNHTS8541210000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time10.3 ns
SeriesZXM62P0
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.000529 oz
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET 30V P-Chnl HDMOS
USHTS8541290095
Pd - Power Dissipation625 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time6.4 ns
TypeMOSFET