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DMN3018SSS-13
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000052867069
描述：场效应管(MOSFET) 1.4W 30V 7.3A 1个N沟道
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage1 V
Transistor PolarityN-Channel
Id - Continuous Drain Current7.3 A
Vgs - Gate-Source Voltage- 10 V, + 10 V
KRHTS8541219000
ManufacturerDiodes Incorporated
Typical Turn-On Delay Time4.3 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
CAHTS8541210000
Factory Pack Quantity2500
Rds On - Drain-Source Resistance21 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20.1 ns
Package / CaseSOIC-8
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
ImageDiodes Incorporated DMN3018SSS-13
PackagingMouseReel
PackagingReel
PackagingCut Tape
Qg - Gate Charge13.2 nC
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
Product TypeMOSFET
MXHTS85412101
SeriesDMN3018
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.002610 oz
Fall Time4.1 ns
CNHTS8541290000
Pd - Power Dissipation1.7 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time4.4 ns