参数项参数值
参数项参数值
DC Current Gain hFE Max40 at 10 mA, 1 V
Gain Bandwidth Product fT500 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current300 mA
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current200 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
QualificationAEC-Q101
Width1.35 mm
MXHTS85412101
DC Collector/Base Gain hfe Min40
Height1 mm
Length2.2 mm
KRHTS8541219000
CNHTS8541210000
Package / CaseSC-70-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
ImageNexperia PMST2369,115
BrandNexperia
Unit Weight0.000988 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
Pd - Power Dissipation200 mW
Part # Aliases934030840115
DescriptionBipolar Transistors - BJT TRANS SW TAPE-7
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)