参数项参数值
参数项参数值
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max32 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Width2.48 mm
MXHTS85412999
DC Collector/Base Gain hfe Min120
Height1.5 mm
Length4.5 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
RoHS Details
Series2DD16
BrandDiodes Incorporated
ImageDiodes Incorporated 2DD1664Q-13
Factory Pack Quantity2500
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerDiodes Incorporated
Pd - Power Dissipation1000 mW
DescriptionBipolar Transistors - BJT 1000W 32Vceo
USHTS8541290095