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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max200
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 350 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max- 350 V
Continuous Collector Current- 0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Length2.9 mm
Width1.3 mm
Height0.94 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage- 1 V
DC Collector/Base Gain hfe Min20
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageON Semiconductor MMBT6520LT1G
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT 500mA 350V PNP
SeriesMMBT6520L
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.000282 oz
USHTS8541210095
Pd - Power Dissipation225 mW