参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current4.3 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Rds On - Drain-Source Resistance69 mOhms
Typical Turn-Off Delay Time16 ns
Package / CaseSOT-223-3
Factory Pack Quantity2500
CAHTS8541290000
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.8 ns
Product TypeMOSFET
ManufacturerDiodes Incorporated
MXHTS85412999
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
BrandDiodes Incorporated
TARIC8541290000
Mounting StyleSMD/SMT
USHTS8541290095
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMN6069SE-13
SubcategoryMOSFETs
Qg - Gate Charge16 nC
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 41V 60V SOT223 T&R 2.5K
Channel ModeEnhancement
Unit Weight0.003951 oz
Fall Time5.3 ns
CNHTS8541290000
Pd - Power Dissipation11 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time6.7 ns