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IPB60R180P7ATMA1
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000052867962
描述：Single N-Channel 600 V 180 mOhm CoolMOS™ Power Mosfet - D2PAK
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance145 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time85 ns
MXHTS85412999
Qg - Gate Charge25 nC
CNHTS8541290000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Fall Time8 ns
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPB60R180P7ATMA1
BrandInfineon Technologies
Unit Weight0.055016 oz
Product TypeMOSFET
Factory Pack Quantity1000
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
Pd - Power Dissipation72 W
Part # AliasesIPB60R180P7 SP001664934
DescriptionMOSFET HIGH POWER_NEW
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)