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2DD2679-13
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > 双极晶体管
编号：B000052867963
描述：Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max270
Gain Bandwidth Product fT240 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage370 mV
DC Collector/Base Gain hfe Min270 at 200 mA, 2 V
Width2.5 mm
Height1.5 mm
MXHTS85412101
Length4.5 mm
KRHTS8541219000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageDiodes Incorporated 2DD2679-13
TARIC8541210000
RoHS Details
Series2DD2
Factory Pack Quantity2500
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2000 mW
BrandDiodes Incorporated
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes Incorporated
USHTS8541210075