参数项参数值
参数项参数值
Gain Bandwidth Product fT15 MHz
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max800 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width3.25 mm
Collector-Emitter Saturation Voltage2 V
Height11 mm
Length8 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-126-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingBulk
ImageON Semiconductor / Fairchild KSC5026MOS
SubcategoryTransistors
BrandON Semiconductor / Fairchild
ManufacturerON Semiconductor
SeriesKSC5026M
Factory Pack Quantity2000
Product TypeBJTs - Bipolar Transistors
Unit Weight0.026843 oz
USHTS8541290095
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN Si Transistor
Pd - Power Dissipation20 W