CSD17576Q5B

CSD17576Q5B

厂牌：TI(德州仪器)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000052868219

描述：Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R

商品参数

参数项参数值

参数项参数值

CNHTS8541290000

ConfigurationSingle

Width5 mm

Vgs th - Gate-Source Threshold Voltage1.1 V

TechnologySi

Id - Continuous Drain Current60 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time5 ns

Height1 mm

MXHTS85412999

Length6 mm

Rds On - Drain-Source Resistance2.4 MOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time23 ns

Package / CaseVSON-CLIP-8

KRHTS8541299000

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

Mounting StyleSMD/SMT

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Qg - Gate Charge53 nC

TARIC8541290000

ManufacturerTexas Instruments

Factory Pack Quantity2500

RoHS Details

BrandTexas Instruments

ImageTexas Instruments CSD17576Q5B

SubcategoryMOSFETs

SeriesCSD17576Q5B

Product CategoryMOSFET

Product TypeMOSFET

DescriptionMOSFET 30V, N-channel NexFET Pwr MOSFET

Channel ModeEnhancement

USHTS8541290095

Fall Time3 ns

Unit Weight0.003743 oz

Pd - Power Dissipation125 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time16 ns