参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current38 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
KRHTS8541299000
Typical Turn-On Delay Time33.5 ns
Minimum Operating Temperature- 55 C
ManufacturerSTMicroelectronics
JPHTS8541290100
CAHTS8541290000
Rds On - Drain-Source Resistance110 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time91.5 ns
Package / CaseTO-247-3
Factory Pack Quantity600
BrandSTMicroelectronics
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleThrough Hole
RoHS Details
PackagingTube
ImageSTMicroelectronics STW40N95K5
Qg - Gate Charge93 nC
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET PTD HIGH VOLTAGE
Product TypeMOSFET
MXHTS85412999
SeriesSTW40N95K5
USHTS8541290095
Channel ModeEnhancement
Unit Weight1.340411 oz
Fall Time10 ns
CNHTS8541290000
Pd - Power Dissipation450 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage950 V
Number of Channels1 Channel
Rise Time51 ns