SIS476DN-T1-GE3

SIS476DN-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000052868246

描述：Single N-Channel 30 V 3.7 W 77 nC Silicon Surface Mount Mosfet - POWERPAK-1212-8

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min105 S

ConfigurationSingle

TechnologySi

Vgs th - Gate-Source Threshold Voltage1 V

Transistor PolarityN-Channel

Id - Continuous Drain Current40 A

Vgs - Gate-Source Voltage- 16 V, + 20 V

Height1.04 mm

Length3.3 mm

KRHTS8541299000

Typical Turn-On Delay Time24 ns

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

RoHS Details

Rds On - Drain-Source Resistance2.05 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time25 ns

Package / CasePowerPAK-1212-8

Factory Pack Quantity3000

BrandVishay Semiconductors

ImageVishay Semiconductors SIS476DN-T1-GE3

TARIC8541290000

Width3.3 mm

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

PackagingReel

PackagingCut Tape

PackagingMouseReel

ManufacturerVishay

Product CategoryMOSFET

SubcategoryMOSFETs

Qg - Gate Charge77 nC

DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8

MXHTS85412999

Product TypeMOSFET

SeriesSIS

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.003379 oz

Fall Time10 ns

CNHTS8541290000

Part # AliasesSIS476DN-GE3

Pd - Power Dissipation52 W

TradenameTrenchFET, PowerPAK

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time17 ns