参数项参数值
参数项参数值
DC Current Gain hFE Max40 at 10 uA, 5 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO32 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max32 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min250
Width1.4 mm
Height1 mm
Length3 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation250 mW
Part # Aliases933324100215
BrandNexperia
ImageNexperia BCW60C,215
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS GP TAPE-7