参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO4 V
MXHTS85412101
Length2.1 mm
Width1.24 mm
Height0.85 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage0.25 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSC-70-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor MMBTA06WT1G
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
TARIC8541210000
DescriptionBipolar Transistors - BJT 500mA 80V NPN
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesMMBTA06WT1
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.000988 oz
USHTS8541210095
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)