DMN33D9LV-7

DMN33D9LV-7

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000052868504

描述：场效应管(MOSFET) 430mW 30V 350mA 2个N沟道

商品参数

参数项参数值

参数项参数值

ConfigurationDual

Transistor PolarityN-Channel

Id - Continuous Drain Current350 mA

Vgs th - Gate-Source Threshold Voltage1.4 V

TechnologySi

Rds On - Drain-Source Resistance2.4 Ohms

Transistor Type2 N-Channel

Typical Turn-Off Delay Time18.2 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Mounting StyleSMD/SMT

Typical Turn-On Delay Time2.9 ns

Minimum Operating Temperature- 55 C

Package / CaseSOT-563-6

Maximum Operating Temperature+ 150 C

PackagingReel

PackagingCut Tape

Qg - Gate Charge1.23 nC

BrandDiodes Incorporated

Factory Pack Quantity3000

ImageDiodes Incorporated DMN33D9LV-7

SubcategoryMOSFETs

ManufacturerDiodes Incorporated

Product TypeMOSFET

Channel ModeEnhancement

DescriptionMOSFET MOSFET BVDSS: 25V 30V SOT563 T&R 3K

Product CategoryMOSFET

Fall Time13.6 ns

Pd - Power Dissipation0.43 W

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels2 Channel

Rise Time2.6 ns