DMG8822UTS-13

DMG8822UTS-13

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000052868621

描述：MOSFET ARRAY 20V 4.9A 8TSSOP

商品参数

参数项参数值

参数项参数值

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage500 mV

TechnologySi

Id - Continuous Drain Current4.9 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

Typical Turn-On Delay Time7.8 ns, 7.8 ns

Rds On - Drain-Source Resistance19 mOhms

Transistor Type2 N-Channel

Typical Turn-Off Delay Time38.6 ns, 38.6 ns

MXHTS85423999

Qg - Gate Charge9.6 nC, 9.6 nC

Package / CaseTSSOP-8

Mounting StyleSMD/SMT

JPHTS8542390990

Maximum Operating Temperature+ 150 C

Channel ModeEnhancement

Minimum Operating Temperature- 55 C

CAHTS8542390000

ProductMOSFET Small Signal

Fall Time10.1 ns, 10.1 ns

CNHTS8542319000

PackagingReel

TARIC8542399000

RoHS Details

Unit Weight0.006737 oz

Pd - Power Dissipation870 mW

ImageDiodes Incorporated DMG8822UTS-13

BrandDiodes Incorporated

Factory Pack Quantity2500

Product TypeMOSFET

Product CategoryMOSFET

Vds - Drain-Source Breakdown Voltage20 V

SubcategoryMOSFETs

ManufacturerDiodes Incorporated

Number of Channels2 Channel

Rise Time21.1 ns, 21.1 ns

USHTS8542390001

DescriptionMOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS