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DMTH6010LPSQ-13
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000052868671
描述：MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current13.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
CNHTS8541290000
QualificationAEC-Q101
Typical Turn-On Delay Time5.7 ns
MXHTS85412999
Rds On - Drain-Source Resistance6.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23.4 ns
KRHTS8541299000
Minimum Operating Temperature- 55 C
JPHTS8541290100
Mounting StyleSMD/SMT
Package / CasePowerDI5060-8
Maximum Operating Temperature+ 175 C
CAHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Qg - Gate Charge41.3 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity2500
ImageDiodes Incorporated DMTH6010LPSQ-13
Product CategoryMOSFET
RoHS Details
SeriesDMTH6010
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time9.7 ns
Unit Weight0.003386 oz
Pd - Power Dissipation136 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time4.3 ns