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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current320 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Width2.41 mm
Rds On - Drain-Source Resistance4 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13 ns
Height4.01 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge-
Mounting StyleThrough Hole
Package / CaseTO-92-3
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ProductMOSFET Small Signal
CNHTS8541210000
Factory Pack Quantity2000
BrandDiodes Incorporated
SeriesZVN2110
Channel ModeEnhancement
Product CategoryMOSFET
ManufacturerDiodes Incorporated
TARIC8541210000
DescriptionMOSFET N-Chnl 100V
ImageDiodes Incorporated ZVN2110ASTZ
Fall Time8 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.016000 oz
Pd - Power Dissipation700 mW
USHTS8541210095
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time8 ns
TypeFET
Moisture Sensitivity Level1 (Unlimited)