参数项参数值
参数项参数值
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 40 V
Collector- Emitter Voltage VCEO Max- 40 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.6 mm
Height1.1 mm
MXHTS85412101
Length3 mm
CNHTS8541210000
KRHTS8541219000
DC Collector/Base Gain hfe Min30 at - 100 mA, - 1 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-26-6
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DMMT3906-7-F
Factory Pack Quantity3000
SeriesDMMT3906
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP BIPOLAR
USHTS8541210095
Unit Weight0.001058 oz
Pd - Power Dissipation225 mW