参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current3.3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.3 ns
Rds On - Drain-Source Resistance85 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time14 ns
MXHTS85412999
Qg - Gate Charge7.8 nC
KRHTS8541299000
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time6.8 ns
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.002610 oz
RoHS Details
Pd - Power Dissipation1.1 W
SeriesDMS208
ImageDiodes Incorporated DMS2085LSD-13
BrandDiodes Incorporated
Product TypeMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Product CategoryMOSFET
Rise Time3 ns
USHTS8541290095
DescriptionMOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr