参数项参数值
参数项参数值
DC Current Gain hFE Max20
Collector- Base Voltage VCBO700 V
ConfigurationSingle
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max400 V
Continuous Collector Current1.5 A
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO9 V
Minimum Operating Temperature- 65 C
Length7.8 mm
Height10.8 mm
JPHTS8541210101
CAHTS8541210000
Collector-Emitter Saturation Voltage0.5 V
Package / CaseSOT-32-3
DC Collector/Base Gain hfe Min8
ImageSTMicroelectronics ST13003
RoHS Details
PackagingTube
Width2.7 mm
Maximum Operating Temperature+ 150 C
TARIC8541210000
BrandSTMicroelectronics
Mounting StyleSMD/SMT
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN Hi-Volt Fast Sw
ManufacturerSTMicroelectronics
Factory Pack Quantity50
MXHTS85412101
SeriesST13003
Product TypeBJTs - Bipolar Transistors
USHTS8541210095
Unit Weight0.002116 oz
CNHTS8541210000
Pd - Power Dissipation40 W