参数项参数值
参数项参数值
Forward Transconductance - Min25 S
ConfigurationSingle
MXHTS85423901
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Id - Continuous Drain Current22 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.7 ns
Length2 mm
Width2 mm
KRHTS8541299000
Height0.75 mm
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9.9 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseWSON-6
Maximum Operating Temperature+ 150 C
CNHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge5.1 nC
ImageTexas Instruments CSD15571Q2
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeMOSFET
DescriptionMOSFET 20V N-Channel NexFET Pwr MOSFET
Product CategoryMOSFET
BrandTexas Instruments
TARIC8542399000
RoHS Details
SubcategoryMOSFETs
SeriesCSD15571Q2
ManufacturerTexas Instruments
Channel ModeEnhancement
Fall Time4.1 ns
Unit Weight0.000198 oz
USHTS8541290095
Pd - Power Dissipation2.5 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time17.2 ns