参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current9.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance750 mOhms
Width9.65 mm
Height4.83 mm
Length10.67 mm
MXHTS85412999
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
PackagingTube
TARIC8541290000
ImageVishay Semiconductors IRFS9N60APBF
RoHS Details
Unit Weight0.050717 oz
SeriesIRFS
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation170 W
BrandVishay Semiconductors
Product CategoryMOSFET
ManufacturerVishay
SubcategoryMOSFETs
DescriptionMOSFET 600V N-CH HEXFET D2PAK
USHTS8541290095
Number of Channels1 Channel