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SBC846BPDW1T1G
厂牌：ON(安森美)
包装：--
类目：元器件 > 分立器件 > 双极晶体管
编号：B000052869758
描述： TRANS NPN/PNP 65V 0.1A SOT363
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max475 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max65 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V, - 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.000265 oz
Pd - Power Dissipation380 mW
SeriesBC846BPDW1
BrandON Semiconductor
ImageON Semiconductor SBC846BPDW1T1G
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT SS SC88 DUAL GEN XSTR
Moisture Sensitivity Level1 (Unlimited)