MUN5312DW1T1G

厂牌：ON(安森美)

包装：--

类目：元器件 > 分立器件 > 预偏置双极晶体管

编号：B000052869818

描述：TRANS BRT DUAL 100MA 50V SOT-363

商品参数

参数项参数值

DC Current Gain hFE Max60 at 5 mA at 10 V

Peak DC Collector Current100 mA

Collector- Emitter Voltage VCEO Max50 V

Continuous Collector Current0.1 A

ConfigurationDual

Transistor PolarityNPN, PNP

DC Collector/Base Gain hfe Min60

Width1.25 mm

Height0.9 mm

Length2 mm

MXHTS85412101

KRHTS8541219000

Package / CaseSC-88-6

Mounting StyleSMD/SMT

JPHTS8541210101

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541210000

CNHTS8541210000

PackagingCut Tape

PackagingMouseReel

PackagingReel

Unit Weight0.000219 oz

TARIC8541210000

ImageON Semiconductor MUN5312DW1T1G

Pd - Power Dissipation187 mW

RoHS Details

Factory Pack Quantity3000

Typical Resistor Ratio1

SeriesMUN5312DW1

ManufacturerON Semiconductor

Typical Input Resistor22 kOhms

BrandON Semiconductor

Product CategoryBipolar Transistors - Pre-Biased

Product TypeBJTs - Bipolar Transistors - Pre-Biased

SubcategoryTransistors

Number of Channels2 Channel

DescriptionBipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP

USHTS8541210095