参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Width3.9 mm
Height1.75 mm
Qg - Gate Charge14 nC, 12 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageInfineon / IR IRF9952TRPBF
Unit Weight0.019048 oz
RoHS Details
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT DUAL N/PCh 30V 3.5A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel