2DB1386R-13

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000052875331

描述：Trans GP BJT PNP 20V 5A 1000mW 4-Pin(3+Tab) SOT-89 T/R

商品参数

参数项参数值

DC Current Gain hFE Max180 at 500 mA, 2 V

Gain Bandwidth Product fT100 MHz

Collector- Base Voltage VCBO- 30 V

Maximum DC Collector Current- 5 A

Collector- Emitter Voltage VCEO Max- 20 V

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO- 6 V

DC Collector/Base Gain hfe Min180 at 500 mA, 2 V

Width2.48 mm

Height1.5 mm

Length4.5 mm

Package / CaseSOT-89-3

Mounting StyleSMD/SMT

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

PackagingMouseReel

PackagingReel

PackagingCut Tape

RoHS Details

Unit Weight0.004603 oz

Series2DB13

Factory Pack Quantity2500

Product TypeBJTs - Bipolar Transistors

Pd - Power Dissipation1000 mW

BrandDiodes Incorporated

Product CategoryBipolar Transistors - BJT

SubcategoryTransistors

ManufacturerDiodes Incorporated

DescriptionBipolar Transistors - BJT PNP 2.5K BIPOLAR