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IXFH36N60P
厂牌：Ixys Corporation
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052878023
描述：MOSFET N-CH 600V 36A TO-247
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min39 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current36 A
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance190 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time80 ns
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time30 ns
Height21.46 mm
CAHTS8541290000
Minimum Operating Temperature- 55 C
Width5.3 mm
MXHTS85411001
Maximum Operating Temperature+ 150 C
Length16.26 mm
KRHTS8541299000
Qg - Gate Charge102 nC
Mounting StyleThrough Hole
JPHTS8541290100
Package / CaseTO-247-3
Channel ModeEnhancement
CNHTS8541210000
Fall Time22 ns
PackagingTube
TARIC8541100000
Unit Weight0.229281 oz
RoHS Details
ImageIXYS IXFH36N60P
SeriesIXFH36N60
Factory Pack Quantity30
Pd - Power Dissipation650 W
Product TypeMOSFET
BrandIXYS
ManufacturerIXYS
SubcategoryMOSFETs
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
TradenameHiPerFET
Number of Channels1 Channel
Rise Time25 ns