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商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT175 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current3 A
ConfigurationSingle
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current3 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
Width3.7 mm
Collector-Emitter Saturation Voltage0.43 V
Height1.65 mm
Length6.7 mm
Factory Pack Quantity1000
MXHTS85412999
KRHTS8541299000
Unit Weight0.003951 oz
Mounting StyleSMD/SMT
CAHTS8541290000
Package / CaseSOT-223-4
JPHTS8541290100
PackagingCut Tape
PackagingMouseReel
Minimum Operating Temperature- 55 C
PackagingReel
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ImageDiodes Incorporated FZT651TA
Product TypeBJTs - Bipolar Transistors
SeriesFZT651
RoHS Details
CNHTS8541290000
ManufacturerDiodes Incorporated
TARIC8541290000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Pd - Power Dissipation2 W
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)