参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT175 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current3 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.43 V
Emitter- Base Voltage VEBO7 V
DC Collector/Base Gain hfe Min100
QualificationAEC-Q101
Maximum Operating Temperature+ 150 C
TARIC8541210000
Package / CaseSOT-223-3
CNHTS8541290000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Unit Weight4 oz
ImageDiodes Incorporated FZT651QTA
BrandDiodes Incorporated
Pd - Power Dissipation3 W
Factory Pack Quantity1000
ManufacturerDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor
USHTS8541290095