参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
ConfigurationSingle
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current0.6 A
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
Height0.5 mm
MXHTS85423399
KRHTS8541219000
Length1.2 mm
Factory Pack Quantity8000
Width0.8 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
JPHTS8541210101
Minimum Operating Temperature- 55 C
CNHTS8541210000
Package / CaseSOT-723-3
CAHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ImageON Semiconductor MMBT2907AM3T5G
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
TARIC8541210000
RoHS Details
DescriptionBipolar Transistors - BJT SS GP PNP TRANSISTOR
SeriesMMBT2907AM3
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
USHTS8541210075
Unit Weight0.000045 oz
Pd - Power Dissipation640 mW
Moisture Sensitivity Level1 (Unlimited)