参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 0.6 A
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO- 5 V
Height0.75 mm
MXHTS85412101
KRHTS8541219000
Collector-Emitter Saturation Voltage- 1.6 V
Length1.6 mm
Factory Pack Quantity3000
Width0.8 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
JPHTS8541210101
Minimum Operating Temperature- 55 C
CNHTS8541210000
Package / CaseSOT-523-3
CAHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ImageDiodes Incorporated MMBT2907AT-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT -60V 150mW
SeriesMMBT2907
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541210095
Unit Weight0.000071 oz
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)