参数项参数值
参数项参数值
DC Current Gain hFE Max300 at - 150 mA, - 10 V
Gain Bandwidth Product fT-
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current-
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 600 mA
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 1.6 V
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min100 at - 150 mA, - 10 V
Mounting StyleSMD/SMT
Factory Pack Quantity3000
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.000296 oz
ImagePanjit MMBT2907A_R1_00001
Pd - Power Dissipation225 mW
RoHS Details
SeriesGPT-02TP
BrandPanjit
ManufacturerPanjit
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT /M7A/TR/7"/HF/3K/SOT-23/TRA/SOT/GPT-02TP/GPT02-QI09/PJ///
Moisture Sensitivity Level1 (Unlimited)