参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage3 V
Transistor PolarityN-Channel
Id - Continuous Drain Current21 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance115 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time62 ns
Maximum Operating Temperature+ 150 C
ImageSTMicroelectronics STL33N60DM2
Package / CasePowerFLAT-8x8-5
PackagingReel
PackagingMouseReel
PackagingCut Tape
SubcategoryMOSFETs
Product CategoryMOSFET
Mounting StyleSMD/SMT
DescriptionMOSFET PTD HIGH VOLTAGE
Factory Pack Quantity3000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge43 nC
BrandSTMicroelectronics
RoHS Details
SeriesSTL33N60DM2
Moisture SensitiveYes
Channel ModeEnhancement
Fall Time9 ns
Unit Weight0.006349 oz
Pd - Power Dissipation150 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time8 ns