参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4.5 V
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.3 ns
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge7.8 nC
Package / CasePowerFLAT-2x2-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
BrandSTMicroelectronics
SeriesSTL3N10F7
ManufacturerSTMicroelectronics
TARIC8541290000
Factory Pack Quantity3000
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
Product TypeMOSFET
Fall Time4 ns
DescriptionMOSFET LGS LV MOSFET
ImageSTMicroelectronics STL3N10F7
Unit Weight0.000268 oz
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation2.4 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time3 ns