参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage1 V
Transistor PolarityN-Channel
Id - Continuous Drain Current7.8 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Typical Turn-On Delay Time8.7 ns
Rds On - Drain-Source Resistance25 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50.6 ns
Package / CasePowerFLAT-5x6-8
ImageSTMicroelectronics STL8N10LF3
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 175 C
BrandSTMicroelectronics
TARIC8541290000
Mounting StyleSMD/SMT
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-Ch 100 V 25 mOhm 7.8 A STripFET III
ManufacturerSTMicroelectronics
Factory Pack Quantity3000
Qg - Gate Charge20.5 nC
MXHTS85412999
RoHS Details
SeriesSTL8N10LF3
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.002681 oz
Fall Time5.2 ns
CNHTS8541290000
Pd - Power Dissipation70 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time9.6 ns