参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance6 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time39 ns
Qg - Gate Charge17 nC
Package / CasePowerFLAT-5x6-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.002681 oz
ImageSTMicroelectronics STL76DN4LF7AG
SeriesSTL76DN4LF7AG
BrandSTMicroelectronics
Pd - Power Dissipation71 W
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET LGS LV MOSFET
Vds - Drain-Source Breakdown Voltage40 V
USHTS8541290095
Number of Channels2 Channel
Rise Time4.3 ns
Moisture Sensitivity Level1 (Unlimited)