STL3NM60N

厂牌：STMICROELECTRONICS

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052880559

描述：N-Channel 600 V 1.8 Ohm MDmesh™ II Power Mosfet - PowerFLAT

商品参数

参数项参数值

ConfigurationSingle

TechnologySi

Vgs th - Gate-Source Threshold Voltage2 V

Transistor PolarityN-Channel

Id - Continuous Drain Current2.2 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 25 V, + 25 V

JPHTS8541290100

CAHTS8541290000

Product CategoryMOSFET

Minimum Operating Temperature- 55 C

Typical Turn-On Delay Time8.6 ns

ImageSTMicroelectronics STL3NM60N

Rds On - Drain-Source Resistance1.8 Ohms

Transistor Type1 N-Channel Power MOSFET

Typical Turn-Off Delay Time20.8 ns

Maximum Operating Temperature+ 150 C

Package / CasePowerFLAT-3.3x3.3-HV-8

PackagingMouseReel

PackagingReel

PackagingCut Tape

DescriptionMOSFET N-Ch 600V 1.5Ohm 2.2A MDMesh II MOS

Mounting StyleSMD/SMT

TARIC8541210000

Factory Pack Quantity3000

ManufacturerSTMicroelectronics

Product TypeMOSFET

BrandSTMicroelectronics

Qg - Gate Charge9.5 nC

MXHTS85412101

SubcategoryMOSFETs

RoHS Details

SeriesSTL3NM60N

USHTS8541290095

Channel ModeEnhancement

Fall Time20 ns

Unit Weight0.002469 oz

CNHTS8541290000

Pd - Power Dissipation2 W

TradenameMDmesh

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time6.2 ns