参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.25 V
TechnologySi
Id - Continuous Drain Current31 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel
Qg - Gate Charge57 nC
Package / CasePowerFLAT-8x8-5
Moisture SensitiveYes
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageSTMicroelectronics STL47N60M6
SeriesMdmesh M6
BrandSTMicroelectronics
Unit Weight0.006349 oz
Product TypeMOSFET
Factory Pack Quantity3000
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
Pd - Power Dissipation189 W
DescriptionMOSFET PTD HIGH VOLTAGE
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
TradenameMDmesh
Number of Channels1 Channel