参数项参数值
参数项参数值
TechnologySi
Id - Continuous Drain Current33 A
ConfigurationDual
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance23 mOhms, 23 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time12.1 ns, 12.1 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.85 ns, 7.85 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageSTMicroelectronics STL36DN6F7
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
Package / CasePowerFLAT-5x6-8
Minimum Operating Temperature- 55 C
Fall Time3.95 ns, 3.95 ns
Unit Weight0.002681 oz
SeriesSTL36DN6F7
Pd - Power Dissipation58 W
DescriptionMOSFET LGS LV MOSFET
BrandSTMicroelectronics
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
ManufacturerSTMicroelectronics
Product CategoryMOSFET
Number of Channels2 Channel
Rise Time3.25 ns, 3.25 ns
TradenameSTripFET