参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage4.5 V
TechnologySi
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.3 ns
CNHTS8541290000
BrandSTMicroelectronics
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge7.8 nC
Package / CasePowerFLAT-2x2-6
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
TARIC8541290000
Factory Pack Quantity3000
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
SeriesSTL3N10F7
ManufacturerSTMicroelectronics
Product TypeMOSFET
Fall Time4 ns
DescriptionMOSFET LGS LV MOSFET
ImageSTMicroelectronics STL3N10F7
Unit Weight0.000268 oz
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation2.4 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time3 ns