参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current12 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15.2 ns
Mounting StyleSMD/SMT
Factory Pack Quantity3000
CNHTS8541210000
MXHTS85412999
KRHTS8541299000
Unit Weight0.002681 oz
Qg - Gate Charge25 nC
JPHTS8541290100
Package / CasePowerFLAT-5x6-8
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ManufacturerSTMicroelectronics
PackagingMouseReel
PackagingReel
PackagingCut Tape
SeriesSTL60N10F7
Channel ModeEnhancement
TARIC8541290000
BrandSTMicroelectronics
RoHS Details
DescriptionMOSFET N-CH 100V 0.013Ohm 12A VII DeepGate
Product CategoryMOSFET
ImageSTMicroelectronics STL60N10F7
Fall Time8 ns
SubcategoryMOSFETs
Product TypeMOSFET
Pd - Power Dissipation5 W
USHTS8541290095
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time16.8 ns