参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current130 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Rds On - Drain-Source Resistance3.5 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time62 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time24 ns
Mounting StyleSMD/SMT
CNHTS8541290000
Factory Pack Quantity3000
MXHTS85423901
Unit Weight0.002434 oz
Qg - Gate Charge42 nC
JPHTS8542390990
Package / CasePowerFLAT-5x6-8
CAHTS8542390000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
SeriesSTL130N6F7
Channel ModeEnhancement
Product CategoryMOSFET
TARIC8542399000
ManufacturerSTMicroelectronics
DescriptionMOSFET LGS LV MOSFET
BrandSTMicroelectronics
ImageSTMicroelectronics STL130N6F7
Fall Time24 ns
SubcategoryMOSFETs
RoHS Details
Product TypeMOSFET
Pd - Power Dissipation125 W
USHTS8541290095
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time44 ns