参数项参数值
参数项参数值
ConfigurationTriple
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Rds On - Drain-Source Resistance160 mOhms
Transistor Type1 P-Channel
Maximum Operating Temperature+ 175 C
Typical Turn-Off Delay Time14 ns
Package / CasePowerFLAT-5x6-8
Minimum Operating Temperature- 55 C
CAHTS8541290000
Vgs - Gate-Source Voltage- 20 V, + 20 V
BrandSTMicroelectronics
JPHTS8541290100
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
KRHTS8541299000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Typical Turn-On Delay Time6.4 ns
RoHS Details
Factory Pack Quantity3000
DescriptionMOSFET P-CH 60V 0.13Ohm 3A STripFET VI
USHTS8541290095
TARIC8541290000
Mounting StyleSMD/SMT
Product TypeMOSFET
Qg - Gate Charge6.4 nC
MXHTS85412999
Product CategoryMOSFET
SeriesSTL12P6F6
Unit Weight0.002681 oz
Fall Time3.7 ns
CNHTS8541210000
Pd - Power Dissipation75 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5.3 ns
Moisture Sensitivity Level1 (Unlimited)