BSC0902NSI

厂牌:Infineon Technologies
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000052880913
描述:Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
最新价格近期成交19单+
数量价格(含税)
1¥10.8430
10¥5.0800
100¥4.4994
500¥3.5005
1000¥3.3298
2500¥3.1761
5000¥2.6126
10000¥2.5784
库存:7,654交期:1-2 weeks起订:1增量:1
数量:
X
10.8430(单价)
合计:
¥10.84
商品满500包邮
商品参数
参数项参数值
参数项参数值
JPHTS8541290100
ConfigurationSingle
Forward Transconductance - Min110 S, 55 S
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
CAHTS8541290000
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Height1.27 mm
KRHTS8541299000
Product CategoryMOSFET
Rds On - Drain-Source Resistance2.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Maximum Operating Temperature+ 150 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
Length5.9 mm
Minimum Operating Temperature- 55 C
Package / CaseTDSON-8
TARIC8541290000
Typical Turn-On Delay Time3.9 ns
ManufacturerInfineon
RoHS Details
ImageInfineon Technologies BSC0902NSI
DescriptionMOSFET N-Ch 30V 100A TDSON-8 OptiMOS
Width5.15 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Factory Pack Quantity5000
BrandInfineon Technologies
CNHTS8541290000
MXHTS85412999
Product TypeMOSFET
Qg - Gate Charge16.2 nC
TradenameOptiMOS
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time3.8 ns
Unit Weight0.004169 oz
Part # AliasesSP000854380 BSC92NSIXT BSC0902NSIATMA1
Pd - Power Dissipation2.5 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time5.4 ns