参数项参数值
参数项参数值
DC Current Gain hFE Max120 at 50 mA, 2 V
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current- 0.5 A
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min120
CAHTS8541290000
Minimum Operating Temperature- 55 C
Height0.8 mm
Width1.25 mm
Length2 mm
Maximum Operating Temperature+ 150 C
MXHTS85412999
KRHTS8541299000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
JPHTS8541290100
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
RoHS Details
ImageROHM Semiconductor 2SA2088T106Q
TARIC8541290000
Unit Weight0.000176 oz
Series2SA2088
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Pd - Power Dissipation200 mW
DescriptionBipolar Transistors - BJT TRANS GP BJT PNP 60V 0.5A 3PIN
BrandROHM Semiconductor
USHTS8541290095