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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 150 mV
Emitter- Base Voltage VEBO- 6 V
DC Collector/Base Gain hfe Min270
Width1.6 mm
Height0.85 mm
Length2.9 mm
RoHS Details
DescriptionBipolar Transistors - BJT PNP 30V 1A
Package / CaseTSMT-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
BrandROHM Semiconductor
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product CategoryBipolar Transistors - BJT
Series2SB1710
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SB1710